Cubic GaN offers to break away from traditional approaches and meet (if not exceed) the future semiconductor device efficiency trends on scalable silicon platforms.
Freestanding Cubic GaN
Engineered substrates for RF, Power Electronics, and Photonics
Light Emitting Diodes
For solid-state lighting and visible emitters
For displays and communication
Proprietary silicon patterning compatible with industrious platforms.
Proprietary technology on Si (100)
Compatible with Si scaling (i.e. 12-inch)
On conventional substrates (i.e. sapphire, SiC, Si (111))
Restricted to specialized fabs (typically, 8-inch)